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| Ordering number : ENA1422 ECH8101 SANYO Semiconductors DATA SHEET ECH8101 Applications * PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications High-power IGBT / MOSFET gate drivers, DC / DC converters, lamp drivers, motor drivers. Features * * * * * * Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. High allowable power dissipation. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg When mounted on ceramic substrate (900mm2x0.8mm) Conditions Ratings -50 -50 -50 -6 -10 -20 -1 1.6 150 -55 to +150 Unit V V V V A A A W C C Marking : GA Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network N0409EA TK IM TC-00002126 No. A1422-1/4 ECH8101 Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 hFE3 fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB= -40V, IE=0A VEB= -4V, IC=0A VCE= -2V, IC= -500mA VCE= -2V, IC= -4A VCE= -2V, IC= -10A VCE= -10V, IC= -500mA VCB= -10V, f=1MHz IC= -6A, IB= -300mA IC= -2A, IB= -40mA IC= -2A, IB= -40mA IC= -10A, IE=0A IC= -100A, RBE=0 IC= -1mA, RBE= IE= -10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. -50 -50 -50 -6 80 137 23 200 140 90 140 115 -100 -70 -0.85 -170 -120 -1.2 MHz pF mV mV V V V V V ns ns ns Ratings min typ max -0.1 -0.1 560 Unit A A Package Dimensions unit : mm (typ) 7011A-005 Electrical Connection 8 Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3 7 6 5 1 : Emitter 2 : Emitter 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Collector 8 : Collector Top view 1 1 0.65 4 0.3 2 3 4 0.25 1 : Emitter 2 : Emitter 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Collector 8 : Collector Bot t om View 0.07 0.9 SANYO : ECH8 Switching Time Test Circuit PW=20s D.C.1% INPUT 50 VR IB1 IB2 RB + 100F VBE=5V + 470F VCC= --25V VOUT RL IC= --50IB1=25IB2= --5A No. A1422-2/4 ECH8101 --10 IC -- VCE --8 0 --9 --45m A --40mA --35mA --10 IC -- VBE VCE= --2V 0m A --9 0m A mA Collector Current, IC -- A --7 --6 --5 --4 --3 --2 --1 0 --25mA --20mA --15mA --60m A m --50 A Collector Current, IC -- A --8 --30mA --8 --6 --10 25C --70m A --5mA IB=0mA --2 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 IT14455 0 0 --0.2 --0.4 --0.6 --0.8 --25C --10mA Ta=75 C --4 --1.0 --1.2 IT14444 Collector-to-Emitter Voltage, VCE -- V 1000 7 5 hFE -- IC Ta=75C 25C --25C Base-to-Emitter Voltage, VBE -- V 1000 7 5 hFE -- IC Ta=75C VCE= --0.5V VCE= --2V DC Current Gain, hFE DC Current Gain, hFE 3 2 3 2 25C --25C 100 7 5 3 2 10 --0.01 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector Current, IC -- A 5 f T -- IC IT14445 5 Collector Current, IC -- A IT14446 Cob -- VCB VCE= --10V Gain-Bandwidth Product, f T -- MHz 3 2 f=1MHz Output Capacitance, Cob -- pF 3 2 100 7 5 3 2 100 7 5 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 7 --10 IT14447 5 3 --1.0 2 3 5 7 2 3 5 7 --10 Collector Current, IC -- A 3 2 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 3 VCE(sat) -- IC IT14448 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 --100 7 5 3 2 --10 7 5 3 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --100 7 5 3 2 --10 7 5 3 2 --1.0 --0.01 C 25 C 25 = Ta 25C Ta= -75C C 75 --2 C 5 = Ta C 75 C 5 --2 25C 25C Ta= -75C 25C 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 2 IT14449 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 2 IT14450 No. A1422-3/4 ECH8101 7 5 VCE(sat) -- IC IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 VBE(sat) -- IC IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 2 25 C --100 7 5 3 2 --1.0 Ta= --25C 7 5 = Ta Ta= --25C 7 C 5 C 5 --2 75C 25C --10 75C 2 3 3 2 --0.01 7 --0.01 25C 5 7 --0.1 2 3 5 7 --1.0 2 3 5 3 2 Forward Bias A S O ICP= --20A IC= --10A DC Collector Current, IC -- A 5 7 --10 2 IT14451 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector Current, IC -- A 1.8 IT14452 PC -- Ta 10s 1.6 When mounted on ceramic substrate (900mm2x0.8mm) 10 Collector Dissipation, PC -- W 57 Collector Current, IC -- A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 1m op 0s s 0 50 er ati 1 10 0m 0m s s on (T a= s 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 25 C ) --0.01 --0.01 2 3 Ta=25C Single pulse When mounted on ceramic substrate (900mm2x0.8mm) 5 7--0.1 23 5 7--1.0 23 5 7 --10 23 Collector-to-Emitter Voltage, VCE -- V IT14453 Ambient Temperature, Ta -- C IT14454 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2009. Specifications and information herein are subject to change without notice. PS No. A1422-4/4 |
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